Infineon Technologies AGIPD65R1K4C6ATMA1MOSFETs
Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 3.5 | |
| 3.2 | |
| 100 | |
| 1 | |
| 1400@10V | |
| 10.5@10V | |
| 10.5 | |
| 225@100V | |
| 28000 | |
| 18.2 | |
| 5.9 | |
| 33 | |
| 7.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1260@10V | |
| Mounting | Surface Mount |
| Package Height | 2.3 mm |
| Package Width | 6.22 mm |
| Package Length | 6.5 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Make an effective common gate amplifier using this IPD65R1K4C6ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 28000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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