Infineon Technologies AGIPD031N03LGATMA1MOSFETs
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 90 | |
| 3.1@10V | |
| 25@4.5V|51@10V | |
| 51 | |
| 4000@15V | |
| 94000 | |
| 5 | |
| 6 | |
| 34 | |
| 9 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.6@10V|3.5@4.5V | |
| 400 | |
| Mounting | Surface Mount |
| Package Height | 2.41(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' IPD031N03LGATMA1 power MOSFET is for you. Its maximum power dissipation is 94000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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