Infineon Technologies AGIPB180N04S401ATMA1MOSFETs
Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quint Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 4 | |
| 180 | |
| 1.3@10V | |
| 135@10V | |
| 135 | |
| 10770@25V | |
| 188000 | |
| 41 | |
| 24 | |
| 38 | |
| 35 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 1.1@10V | |
| Mounting | Surface Mount |
| Package Height | 4.4 mm |
| Package Width | 9.25 mm |
| Package Length | 10 mm |
| PCB changed | 6 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 7 | |
| Lead Shape | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' IPB180N04S401ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 188000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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