Infineon Technologies AGIPB107N20N3GATMA1MOSFETs
Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| 88 | |
| 10.7@10V | |
| 65@10V | |
| 65 | |
| 5340@100V | |
| 300000 | |
| 11 | |
| 26 | |
| 41 | |
| 18 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 9.6@10V|9.9@10V | |
| Mounting | Surface Mount |
| Package Height | 4.57(Max) |
| Package Width | 9.45(Max) |
| Package Length | 10.31(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Use Infineon Technologies' IPB107N20N3GATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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