| 유럽 연합 RoHS 명령어 | Compliant |
| 친환경 무연 | Obsolete |
| Automotive | No |
| PPAP | No |
| 제품 카테고리 | Power MOSFET |
| Material | GaN |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 650 |
| Maximum Gate-Source Voltage (V) | 7 |
| Maximum Continuous Drain Current (A) | 7.5 |
| Maximum Drain-Source Resistance (mOhm) | 260@6V |
| Typical Gate Charge @ Vgs (nC) | 1.5@6V |
| Typical Input Capacitance @ Vds (pF) | 65@400V |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Surface Mount |
| Package Height | 0.5 |
| Package Width | 5.01 |
| Package Length | 6.56 |
| PCB changed | 3 |
| Standard Package Name | LGA |
| Supplier Package | ULGA |
| Pin Count | 3 |
