구매 최고 구매자
Diodes IncorporatedFZT657TAGP BJT
Trans GP BJT NPN 300V 0.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 300 | |
| 300 | |
| 7 | |
| -55 to 150 | |
| 1@10mA@100mA | |
| 0.5@10mA@100mA | |
| 0.5 | |
| 100 | |
| 40@10mA@5V|50@100mA@5V | |
| 3000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.6 mm |
| Package Width | 3.5 mm |
| Package Length | 6.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN FZT657TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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