| ์ ๋ฝ ์ฐํฉ RoHS ๋ช
๋ น์ด | Compliant with Exemption |
| ๋ฏธ๊ตญ์์ถํต์ ๋ถ๋ฅECCN ์ธ์ฝ๋ฉ | EAR99 |
| ์นํ๊ฒฝ ๋ฌด์ฐ | Active |
| ๋ฏธ๊ตญ ์ธ๊ด ์ํ ์ฝ๋ | 8541.29.00.95 |
| SVHC | Yes |
| SVHC ๊ธฐ์ค ์ด๊ณผ | Yes |
| Automotive | No |
| PPAP | No |
| ์ ํ ์นดํ
๊ณ ๋ฆฌ | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 150 |
| Maximum Gate-Source Voltage (V) | ยฑ20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Operating Junction Temperature (ยฐC) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 167 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 5.9@10V |
| Typical Gate Charge @ Vgs (nC) | 92@10V |
| Typical Gate Charge @ 10V (nC) | 92 |
| Typical Gate to Drain Charge (nC) | 16 |
| Typical Gate to Source Charge (nC) | 31 |
| Typical Reverse Recovery Charge (nC) | 348 |
| Typical Input Capacitance @ Vds (pF) | 7100@75V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 23@75V |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Output Capacitance (pF) | 664 |
| Maximum Power Dissipation (mW) | 429000 |
| Typical Fall Time (ns) | 21 |
| Typical Rise Time (ns) | 67 |
| Typical Turn-Off Delay Time (ns) | 71 |
| Typical Turn-On Delay Time (ns) | 35 |
| Minimum Operating Temperature (ยฐC) | -55 |
| Maximum Operating Temperature (ยฐC) | 175 |
| Packaging | Tube |
| Typical Drain-Source Resistance @ 25ยฐC (mOhm) | 4.8@10V |
| Maximum Pulsed Drain Current @ TC=25ยฐC (A) | 668 |
| Typical Gate Plateau Voltage (V) | 4.8 |
| Typical Reverse Recovery Time (ns) | 105 |
| Maximum Diode Forward Voltage (V) | 1.25 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Mounting | Through Hole |
| Package Height | 20.57 mm |
| Package Width | 4.7 mm |
| Package Length | 15.62 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
