onsemiDTA114EET1GDigital BJT - Pre-Biased
Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 50 | |
| 0.1 | |
| 35@5mA@10V | |
| 10 | |
| 1 | |
| 0.25@0.3mA@10mA | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75 |
| Package Width | 0.8 |
| Package Length | 1.6 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-416 |
| 3 | |
| Lead Shape | Gull-wing |
Ensure the proper transistor is used within your digital processing unit by using ON Semiconductor's PNP DTA114EET1G digital transistor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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