| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Source Common Drain | |
| Enhancement | |
| N | |
| 2 | |
| 12 | |
| ±10 | |
| -55 to 150 | |
| 8 | |
| 5.9@4.5V | |
| 8.4@4.5V | |
| 902@6V | |
| 2300 | |
| 589 | |
| 353 | |
| 711 | |
| 205 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.2 |
| Package Width | 1.15(Max) |
| Package Length | 2.2(Max) |
| PCB changed | 6 |
| Supplier Package | PicoStar |
| 6 |
Create an effective common drain amplifier using this CSD83325LT power MOSFET from Texas Instruments. Its maximum power dissipation is 2300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
AI 기반 의료기기 설계
Arrow의 최신 백서에서 진단 및 치료 솔루션을 더 빠르고 안전하게 개발할 수 있는 시스템 설계 팁, 부품 추천 및 AI 인사이트를 확인하세요.