| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| NexFET | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.6 | |
| -55 to 150 | |
| 50 | |
| 100 | |
| 1 | |
| 14.5@10V | |
| 16@10V | |
| 16 | |
| 2.9 | |
| 5.5 | |
| 134 | |
| 1290@50V | |
| 13.3@50V | |
| 2.6 | |
| 251 | |
| 2800 | |
| 3 | |
| 3 | |
| 10 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 13.8@6V|12.1@10V | |
| 2.8 | |
| 219 | |
| 55 | |
| 0.8 | |
| 4.5 | |
| 36 | |
| 1 | |
| 3 | |
| 2.4 | |
| 20 | |
| 9.7 | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 3.3 |
| Package Length | 3.3 |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSON-CLIP EP |
| 8 | |
| Lead Shape | No Lead |
As an alternative to traditional transistors, the CSD19537Q3T power MOSFET from Texas Instruments can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2800 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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