| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.7 | |
| -55 to 150 | |
| 100 | |
| 100 | |
| 1 | |
| 1.15@10V | |
| 39@4.5V | |
| 9.3 | |
| 14.4 | |
| 80 | |
| 7070@15V | |
| 87@15V | |
| 1.2 | |
| 1780 | |
| 3200 | |
| 14 | |
| 41 | |
| 32 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.95@10V|1.15@4.5V | |
| 3.2 | |
| 400 | |
| 50 | |
| 0.8 | |
| 2.9 | |
| 37 | |
| 1 | |
| 1.4 | |
| 2.4 | |
| 20 | |
| 40 | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 6 |
| Package Length | 5 |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSON-CLIP EP |
| 8 | |
| Lead Shape | No Lead |
This CSD17559Q5 power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 3200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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