| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| 10 | |
| 1.4 | |
| 33 | |
| 2@8V | |
| 18@4.5V | |
| 3.5 | |
| 6.6 | |
| 63 | |
| 3070@12.5V | |
| 2190 | |
| 3100 | |
| 12 | |
| 16 | |
| 32 | |
| 10.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.1@3V|1.7@4.5V|1.5@8V | |
| 1.1 | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 6.1(Max) |
| Package Length | 5.1(Max) |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | SON EP |
| 8 |
Compared to traditional transistors, CSD16325Q5 power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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