onsemiCPH6501-TL-EGP BJT

Trans GP BJT NPN 30V 1.5A 1200mW 6-Pin CPH T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN CPH6501-TL-E GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

A datasheet is only available for this product at this time.

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