| 유럽 연합 RoHS 명령어 | Compliant with Exemption |
| 미국수출통제분류ECCN 인코딩 | EAR99 |
| 친환경 무연 | Active |
| 미국 세관 상품 코드 | EA |
| Automotive | No |
| PPAP | No |
| 제품 카테고리 | Power MOSFET |
| Material | SiC |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 23 |
| Operating Junction Temperature (°C) | -40 to 175 |
| Maximum Continuous Drain Current (A) | 149(Typ) |
| Maximum Drain-Source Resistance (mOhm) | 14.8@15V |
| Typical Gate Charge @ Vgs (nC) | 354@15V |
| Typical Input Capacitance @ Vds (pF) | 11000@1000V |
| Maximum Power Dissipation (mW) | 470000(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 125 |
| Supplier Temperature Grade | Industrial |
| Mounting | Screw |
| Package Height | 12.33 mm |
| Package Width | 56.7 mm |
| Package Length | 62.8 mm |
| PCB changed | 33 |
| Pin Count | 33 |
