| 유럽 연합 RoHS 명령어 | Compliant with Exemption |
| 친환경 무연 | Active |
| 제품 카테고리 | Power MOSFET |
| Configuration | Dual Dual Drain |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 100 |
| Maximum Gate-Source Voltage (V) | 20 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 23 |
| Maximum Drain-Source Resistance (mOhm) | 35@10V |
| Typical Gate Charge @ Vgs (nC) | 20@10V|10.7@5V |
| Typical Input Capacitance @ Vds (pF) | 1252@25V |
| Maximum Power Dissipation (mW) | 42000 |
| Typical Fall Time (ns) | 10.5 |
| Typical Rise Time (ns) | 15.1 |
| Typical Turn-Off Delay Time (ns) | 12.9 |
| Typical Turn-On Delay Time (ns) | 10.7 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Temperature Grade | Automotive |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) |
| Package Width | 4.7(Max) |
| Package Length | 5.3(Max) |
| PCB changed | 8 |
| Standard Package Name | FPAK |
| Supplier Package | LFPAK-D |
| Pin Count | 8 |
