Infineon Technologies AGBSZ240N12NS3GATMA1MOSFETs
Trans MOSFET N-CH 120V 37A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 120 | |
| ±20 | |
| 4 | |
| 37 | |
| 24@10V | |
| 20@10V | |
| 20 | |
| 1400@60V | |
| 66000 | |
| 4 | |
| 4 | |
| 13 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 3.3 mm |
| Package Length | 3.3 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TSDSON EP |
| 8 | |
| Lead Shape | No Lead |
As an alternative to traditional transistors, the BSZ240N12NS3GATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 66000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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