Infineon Technologies AGBSZ097N04LSGATMA1MOSFETs
Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC ๊ธฐ์ค ์ด๊ณผ | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ยฑ20 | |
| 2 | |
| 12 | |
| 9.7@10V | |
| 8.6@4.5V|18@10V | |
| 18 | |
| 1400@20V | |
| 2100 | |
| 2.8 | |
| 2.4 | |
| 16 | |
| 3.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 3.3 mm |
| Package Length | 3.3 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TSDSON EP |
| 8 | |
| Lead Shape | No Lead |
Make an effective common source amplifier using this BSZ097N04LSGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 ยฐC to 150 ยฐC.
| EDA / CAD Models |
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