Infineon Technologies AGBSC032N04LSATMA1MOSFETs
Trans MOSFET N-CH 40V 21A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| 20 | |
| 2 | |
| -55 to 150 | |
| 21 | |
| 100 | |
| 1 | |
| 3.2@10V | |
| 13@4.5V|25@10V | |
| 25 | |
| 4.1 | |
| 4.8 | |
| 52 | |
| 6 | |
| 1800@20V | |
| 40@20V | |
| 1.2 | |
| 500 | |
| 2500 | |
| 3 | |
| 4 | |
| 19 | |
| 4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.5@10V|3.3@4.5V | |
| 2.5 | |
| 392 | |
| 50 | |
| 0.88 | |
| 2.7 | |
| 23 | |
| 1 | |
| 1.6 | |
| 20 | |
| 21 | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 5.9 mm |
| Package Length | 5.15 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| 8 | |
| Lead Shape | No Lead |
This BSC032N04LSATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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