Infineon Technologies AGBSC010NE2LSIATMA1MOSFETs
Trans MOSFET N-CH 25V 38A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| 20 | |
| 2 | |
| -55 to 150 | |
| 38 | |
| 100 | |
| 500 | |
| 1.05@10V | |
| 29@4.5V|59@10V | |
| 59 | |
| 6.9 | |
| 10 | |
| 5 | |
| 10 | |
| 4200@12V | |
| 180@12V | |
| 1.2 | |
| 1800 | |
| 2500 | |
| 4.6 | |
| 6.2 | |
| 32 | |
| 6.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.9@10V|1.1@4.5V | |
| 2.5 | |
| 944 | |
| 50 | |
| 0.56 | |
| 2.4 | |
| 0.7 | |
| 0.3 | |
| 1.2 | |
| 20 | |
| 38 | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 5.9 |
| Package Length | 5.15 |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| 8 | |
| Lead Shape | No Lead |
As an alternative to traditional transistors, the BSC010NE2LSIATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Counter UAV Threats With Smart Defenses
Learn how to combine intelligent processing, advanced sensing and rapid response into a unified counter-UAV defensive system.