onsemiBC857BTT1GGP BJT

Trans GP BJT PNP 45V 0.1A 300mW 3-Pin SOT-416 T/R

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the PNP BC857BTT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 2 일 이내 배송

      Ships from:
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      Date Code:
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