onsemiBC847BTT1GGP BJT

Trans GP BJT NPN 45V 0.1A 300mW 3-Pin SOT-416 T/R

If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's NPN BC847BTT1G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

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      Ships from:
      미국
      Date Code:
      2327+
      Manufacturer Lead Time:
      26 주
      Minimum Of :
      1
      Maximum Of:
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      Country Of origin:
      중국
         
      • Price: $0.0716
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 내일 배송

      Ships from:
      미국
      Date Code:
      2327+
      Manufacturer Lead Time:
      26 주
      Country Of origin:
      중국
      • In Stock: 51,975 부품
      • Price: $0.0716
    • (3000)

      2 일 이내 배송

      Ships from:
      네덜란드
      Date Code:
      2535+
      Manufacturer Lead Time:
      26 주
      Country Of origin:
      중국
      • In Stock: 180,000 부품
      • Price: $0.0268

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