Diodes IncorporatedBC847BFA-7BGP BJT
Trans GP BJT NPN 45V 0.1A 435mW 3-Pin X2-DFN T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 6 | |
| 1@0.5mA@10mA|1.1@5mA@100mA | |
| 0.125@0.5mA@10mA|0.3@5mA@100mA | |
| 0.1 | |
| 15 | |
| 100@10uA@5V|200@2mA@5V | |
| 435 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 0.37 |
| Package Width | 0.8 |
| Package Length | 0.6 |
| PCB changed | 3 |
| Standard Package Name | DFN |
| Supplier Package | X2-DFN |
| 3 | |
| Lead Shape | No Lead |
If you require a general purpose BJT that can handle high voltages, then the NPN BC847BFA-7B BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 435 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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