Infineon Technologies AGBC846PNH6327XTSA1GP BJT

Compared to other transistors, the npn and PNP BC846PNH6327XTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.