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TT Electronics / Semelab2N3440GP BJT
Trans GP BJT NPN 250V 1A 5000mW 3-Pin TO-39
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 300 | |
| 250 | |
| 7 | |
| 1.3@4mA@50mA | |
| 0.5@4mA@50mA | |
| 1 | |
| 20000 | |
| 40@20mA@10V | |
| 5000 | |
| -65 | |
| 200 | |
| Diameter | 9.4(Max) |
| Mounting | Through Hole |
| Package Height | 6.6(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-39 |
| 3 | |
| Lead Shape | Through Hole |
Do you require a transistor in your circuit operating in the high-voltage range? This NPN 2N3440 general purpose bipolar junction transistor, developed by Semelab (TT electronics), is your solution. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 5000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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