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NVJD5121NT2G|ONSEMI|simage
NVJD5121NT2G|ONSEMI|limage
MOSFET

NVJD5121NT2G

Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R Automotive AEC-Q101

onsemi
Fiches techniques 

Spécifications techniques du produit
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • Automotive
    Yes
  • PPAP
    Yes
  • Category
    Power MOSFET
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    0.295
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    1600@10V
  • Typical Gate Charge @ Vgs (nC)
    0.9@4.5V
  • Typical Input Capacitance @ Vds (pF)
    26@20V
  • Maximum Power Dissipation (mW)
    266
  • Typical Fall Time (ns)
    32
  • Typical Rise Time (ns)
    34
  • Typical Turn-Off Delay Time (ns)
    34
  • Typical Turn-On Delay Time (ns)
    22
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.9
  • Package Width
    1.25
  • Package Length
    2
  • PCB changed
    6
  • Standard Package Name
    SOT
  • Supplier Package
    SC-88
  • Pin Count
    6

Documentation et ressources

Fiches techniques
Ressources de conception