DRAM 칩

NT5AD512M16C4-HRI

DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin TFBGA

Nanya Technology

Spécifications techniques du produit

• 유럽 연합 RoHS 명령어

  Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  8542.32.00.36

• Automotive

  Unknown

• PPAP

  Unknown

• DRAM Type

  DDR4 SDRAM

• Chip Density (bit)

  8G

• Organization

  512Mx16

• Number of Internal Banks

  16

• Number of Words per Bank

  32M

• Number of Bits/Word (bit)

  16

• Data Bus Width (bit)

  16

• Maximum Clock Rate (MHz)

  2666

• Maximum Access Time (ns)

  0.17

• Address Bus Width (bit)

  18

• Minimum Operating Supply Voltage (V)

  1.14

• Maximum Operating Supply Voltage (V)

  1.26

• Operating Current (mA)

  266

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  95

• Supplier Temperature Grade

  Industrial

• Number of I/O Lines (bit)

  16

• Mounting

  Surface Mount

• Package Height

  1(Max) mm

• Package Width

  7.5 mm

• Package Length

  13 mm

• PCB changed

  96

• Standard Package Name

  BGA

• Supplier Package

  TFBGA

• Pin Count

  96

• Lead Shape

  Ball