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JANTX2N4150|SEMICOA|simage
JANTX2N4150|SEMICOA|limage
GP BJT

JANTX2N4150

Trans GP BJT NPN 70V 10A 1000mW 3-Pin TO-5

Semicoa Semiconductors
Fiches techniques 

Spécifications techniques du produit
  • 유럽 연합 RoHS 명령어
    Not Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Obsolete
  • 미국 세관 상품 코드
    JANTX2N4150
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    100
  • Maximum Collector-Emitter Voltage (V)
    70
  • Maximum Base-Emitter Voltage (V)
    10
  • Operating Junction Temperature (°C)
    -65 to 200
  • Maximum Base-Emitter Saturation Voltage (V)
    1.5@500mA@5A|2.5@1A@10A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.6@500mA@5A|2.5@1A@10A
  • Maximum DC Collector Current (A)
    10
  • Maximum Collector Cut-Off Current (nA)
    10000
  • Minimum DC Current Gain
    50@1A@5V|40@5A@5V|10@10A@5V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Supplier Temperature Grade
    Military
  • Diameter
    9.4(Max)
  • Mounting
    Through Hole
  • Package Height
    6.6(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-5
  • Pin Count
    3
Quantité de commande

Documentation et ressources

Fiches techniques
Ressources de conception