MOSFET

IXTK120N25P

Trans MOSFET N-CH 250V 120A 3-Pin(3+Tab) TO-264AA

IXYS

Spécifications techniques du produit

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  250

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Continuous Drain Current (A)

  120

• Maximum Drain-Source Resistance (mOhm)

  24@10V

• Typical Gate Charge @ Vgs (nC)

  185@10V

• Typical Gate Charge @ 10V (nC)

  185

• Typical Input Capacitance @ Vds (pF)

  8700@25V

• Maximum Power Dissipation (mW)

  700000

• Typical Fall Time (ns)

  33

• Typical Rise Time (ns)

  33

• Typical Turn-Off Delay Time (ns)

  130

• Typical Turn-On Delay Time (ns)

  30

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Mounting

  Through Hole

• Package Height

  26.16(Max)

• Package Width

  5.13(Max)

• Package Length

  19.96(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-264AA

• Pin Count

  3