MOSFET

IRFD014PBF

Trans MOSFET N-CH 60V 1.7A 4-Pin HVMDIP

Vishay

Spécifications techniques du produit

• RoHS (Unión Europea)

  Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Obsolete

• Código HTS

  8541.10.00.80

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single Dual Drain

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  4

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  1.7

• Maximum Drain-Source Resistance (mOhm)

  200@10V

• Typical Gate Charge @ Vgs (nC)

  11(Max)@10V

• Typical Gate Charge @ 10V (nC)

  11(Max)

• Typical Gate to Drain Charge (nC)

  5.8(Max)

• Typical Gate to Source Charge (nC)

  3.1(Max)

• Typical Reverse Recovery Charge (nC)

  200

• Typical Input Capacitance @ Vds (pF)

  310@25V

• Typical Output Capacitance (pF)

  160

• Maximum Power Dissipation (mW)

  1300

• Typical Fall Time (ns)

  19

• Typical Rise Time (ns)

  50

• Typical Turn-Off Delay Time (ns)

  13

• Typical Turn-On Delay Time (ns)

  10

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Mounting

  Through Hole

• Package Height

  3.37(Max)

• Package Width

  6.29(Max)

• Package Length

  5(Max)

• PCB changed

  4

• Standard Package Name

  DIP

• Supplier Package

  HVMDIP

• Pin Count

  4

• Lead Shape

  Through Hole