Spécifications techniques du produit
欧盟RoHS指令
Compliant with Exemption
美国出口管制分类ECCN编码
EAR99
环保无铅
Active
美国海关商品代码
COMPONENTS
SVHC
Yes
SVHC超标
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
400
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
5.5
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
1000@10V
Typical Gate Charge @ Vgs (nC)
38(Max)@10V
Typical Gate Charge @ 10V (nC)
38(Max)
Typical Gate to Drain Charge (nC)
22(Max)
Typical Gate to Source Charge (nC)
5.7(Max)
Typical Reverse Recovery Charge (nC)
1800
Typical Input Capacitance @ Vds (pF)
700@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
64@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
170
Maximum Power Dissipation (mW)
74000
Typical Fall Time (ns)
14
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
38
Typical Turn-On Delay Time (ns)
10
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Pulsed Drain Current @ TC=25°C (A)
22
Typical Reverse Recovery Time (ns)
270
Maximum Diode Forward Voltage (V)
1.6
Minimum Gate Resistance (Ohm)
0.6
Maximum Gate Resistance (Ohm)
2.3
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Through Hole
Package Height
8.79(Max)
Package Width
4.65(Max)
Package Length
10.36(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220AB
Pin Count
3
Lead Shape
Through Hole