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MOSFET

FF11MR12W1M1B11BOMA1

Trans MOSFET N-CH SiC 1.2KV 100A 18-Pin EASY1B-2 Tray

Infineon Technologies AG

Spécifications techniques du produit

• 欧盟RoHS指令

  Compliant with Exemption

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Obsolete

• 美国海关商品代码

  8541.29.00.95

• SVHC

  Yes

• SVHC超标

  Yes

• Automotive

  No

• PPAP

  No

• Material

  SiC

• Configuration

  Dual

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  1200

• Maximum Gate-Source Voltage (V)

  20

• Maximum Continuous Drain Current (A)

  100

• Maximum Drain-Source Resistance (mOhm)

  11.3(Typ)@15V

• Typical Gate Charge @ Vgs (nC)

  248@15V

• Typical Input Capacitance @ Vds (pF)

  7360@800V

• Maximum Power Dissipation (mW)

  20

• Typical Fall Time (ns)

  28

• Typical Rise Time (ns)

  16.4

• Typical Turn-Off Delay Time (ns)

  64.3

• Typical Turn-On Delay Time (ns)

  25.1

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tray

• Mounting

  Screw

• Package Height

  12

• Package Width

  33.8

• Package Length

  62.8

• PCB changed

  18

• Supplier Package

  EASY1B-2

• Pin Count

  18