Spécifications techniques du produit
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
BSZ018NE2LSATMA1
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
25
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2
Maximum Continuous Drain Current (A)
23
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
1.8@10V
Typical Gate Charge @ Vgs (nC)
18.6@4.5V|39@10V
Typical Gate Charge @ 10V (nC)
39
Typical Input Capacitance @ Vds (pF)
2800@12V
Maximum Power Dissipation (mW)
2100
Typical Fall Time (ns)
3.4
Typical Rise Time (ns)
4.4
Typical Turn-Off Delay Time (ns)
26
Typical Turn-On Delay Time (ns)
5.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
1.5@10V|1.9@4.5V
Mounting
Surface Mount
Package Height
1
Package Width
3.3
Package Length
3.3
PCB changed
8
Standard Package Name
SON
Supplier Package
TSDSON EP
Pin Count
8
Lead Shape
No Lead
Quantité de commande