Spécifications techniques du produit
RoHS (Unione Europea)
Compliant
Stato del componente
Active
SVHC
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
30
Maximum Gate Threshold Voltage (V)
2.5
Operating Junction Temperature (°C)
-65 to 150
Maximum Continuous Drain Current (A)
0.3
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
5000@10V
Typical Reverse Recovery Charge (nC)
30
Typical Input Capacitance @ Vds (pF)
31@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
3.5@10V
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
6.8
Maximum Power Dissipation (mW)
830
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
2800@10V|3800@4.5V
Maximum Positive Gate-Source Voltage (V)
30
Maximum Pulsed Drain Current @ TC=25°C (A)
1.2
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
350
Typical Diode Forward Voltage (V)
0.85
Typical Reverse Recovery Time (ns)
30
Maximum Diode Forward Voltage (V)
1.5
Typical Gate Threshold Voltage (V)
2
Quantité de commande