The ON Semiconductor MOSFET have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This product can deliver pulsed currents up to 2A. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is ±20 V. Its maximum power dissipation is 200 mW. It has 1 number of elements per chip. This MOSFET has an operating temperature range of -55°C to 150°C.
Features and Benefits:
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
Application:
• Small servo motor control
• Power MOSFET gate drivers
Spécifications techniques du produit
EU RoHS
Compliant
Part Status
Active
Automotive
No
PPAP
No
Category
Small Signal
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
0.115
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
7500@10V
Typical Gate Charge @ Vgs (nC)
1@10V
Typical Gate Charge @ 10V (nC)
1
Typical Input Capacitance @ Vds (pF)
20@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
4@25V
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
11
Maximum Power Dissipation (mW)
200
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
1200@10V|1700@5V
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
0.8
Typical Diode Forward Voltage (V)
0.88
Typical Gate Plateau Voltage (V)
4.5
Maximum Diode Forward Voltage (V)
1.5
Typical Gate Threshold Voltage (V)
2.1
Quantité de commande