| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 25 | |
| 5 | |
| -55 to 200 | |
| 0.5 | |
| 0.95@50mA@4A | |
| 0.045@10mA@0.5A|0.08@10mA@1A|0.18@10mA@2A|0.22@50mA@4A | |
| 4 | |
| 250@10mA@2V|300@500mA@2V|300@1A@2V|200@4A@2V|35@20A@2V | |
| 1500 | |
| -55 | |
| 200 | |
| Installation | Through Hole |
| Hauteur du paquet | 3.9 |
| Largeur du paquet | 2.28 |
| Longueur du paquet | 4.57 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | E-Line |
| 3 | |
| Forme de sonde | Through Hole |
This specially engineered NPN ZTX1049A GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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