MOSFETs

TK2A65D(Q)

Trans MOSFET N-CH Si 650V 2A 3-Pin(3+Tab) TO-220SIS

Toshiba

Spécifications techniques du produit

• RoHS (Unión Europea)

  Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Active

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  650

• Maximum Gate-Source Voltage (V)

  ±30

• Maximum Gate Threshold Voltage (V)

  4.4

• Maximum Continuous Drain Current (A)

  2

• Maximum Gate-Source Leakage Current (nA)

  1000

• Maximum IDSS (uA)

  10

• Maximum Drain-Source Resistance (mOhm)

  3260@10V

• Typical Gate Charge @ Vgs (nC)

  9@10V

• Typical Gate Charge @ 10V (nC)

  9

• Typical Input Capacitance @ Vds (pF)

  380@25V

• Maximum Power Dissipation (mW)

  30000

• Typical Fall Time (ns)

  7

• Typical Rise Time (ns)

  15

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Mounting

  Through Hole

• Package Height

  15

• Package Width

  4.5

• Package Length

  10

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220SIS

• Pin Count

  3