onsemiMMBTA63LT1GDarlington BJT
Trans Darlington PNP 30V 0.5A 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 1 | |
| 30 | |
| 30 | |
| 10 | |
| 0.5 | |
| 0.1 | |
| 125(Min) | |
| 1.5@0.1mA@100mA | |
| 10000@100mA@5V|5000@10mA@5V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Amplify your current with the PNP MMBTA63LT1G Darlington transistor, developed by ON Semiconductor. This Darlington transistor array's maximum emitter base voltage is 10 V. This product's maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@100mA@5 V|5000@10mA@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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