Spécifications techniques du produit
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Process Technology
Trench
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4.5
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
44
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
30@10V
Typical Gate Charge @ Vgs (nC)
27.4@10V
Typical Gate Charge @ 10V (nC)
27.4
Typical Gate to Drain Charge (nC)
9
Typical Gate to Source Charge (nC)
8.8
Typical Reverse Recovery Charge (nC)
144
Typical Input Capacitance @ Vds (pF)
1567@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
47@25V
Minimum Gate Threshold Voltage (V)
2.5
Typical Output Capacitance (pF)
200
Maximum Power Dissipation (mW)
130000
Typical Fall Time (ns)
32
Typical Rise Time (ns)
47
Typical Turn-Off Delay Time (ns)
36
Typical Turn-On Delay Time (ns)
21
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Maximum Pulsed Drain Current @ TC=25°C (A)
110
Typical Gate Plateau Voltage (V)
5
Typical Reverse Recovery Time (ns)
60
Maximum Diode Forward Voltage (V)
1.1
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
2.38(Max) mm
Package Width
6.22(Max) mm
Package Length
6.73(Max) mm
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-252
Pin Count
3
Lead Shape
Gull-wing