MOSFETs

IPA60R190P6XKSA1

Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Tube

Infineon Technologies AG

Spécifications techniques du produit

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  600

• Maximum Gate-Source Voltage (V)

  20

• Maximum Gate Threshold Voltage (V)

  4.5

• Maximum Continuous Drain Current (A)

  20.2

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  190@10V

• Typical Gate Charge @ Vgs (nC)

  37@10V

• Typical Gate Charge @ 10V (nC)

  37

• Typical Input Capacitance @ Vds (pF)

  1750@100V

• Maximum Power Dissipation (mW)

  34000

• Typical Fall Time (ns)

  7

• Typical Rise Time (ns)

  8

• Typical Turn-Off Delay Time (ns)

  45

• Typical Turn-On Delay Time (ns)

  15

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Typical Drain-Source Resistance @ 25°C (mOhm)

  171@10V

• Maximum Pulsed Drain Current @ TC=25°C (A)

  57

• Mounting

  Through Hole

• Package Height

  16 mm

• Package Width

  4.7 mm

• Package Length

  10.5 mm

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220FP

• Pin Count

  3

• Lead Shape

  Through Hole