IMBG120R030M1HXTMA1

Infineon presents CoolSiCTM MOSFET 1200 V class in a new D2PAK-7L package. A broad RDS(on) portfolio from 30 mΩ up to 350 mΩ enables top efficiency in a wide power range of industrial power supplies, chargers, as well as various ampere ratings in servo drives.

CoolSiC™ trench MOSFET technology is optimized to combine performance with reliability in operation, complemented by a 3 µs short-circuit withstand time. Thanks to .XT interconnection technology, the thermal capabilities in a small package form factor are significantly improved. .XT technology allows 30% extra loss to be dissipated through the chip-package interconnection, compared to standard packages. The new CoolSiC™ .XT portfolio shows best-in-class thermal performance and cycling capabilities: up to 14% higher output current, or doubled switching frequency, or 10-15°C lower operating temperatures compared to standard interconnection.

Discover the multiple ways of improving application performance with this SMD portfolio: passive cooling solutions, increased power density, longer lifetimes, and more.

Summary of Features

• Very low switching losses
• Short-circuit withstand time, 3 µs
• Fully controllable dV/dt
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Robustness against parasitic turn-on, 0 V turn-off gate voltage can be applied
• Robust body diode for hard commutation
• .XT interconnection technology for best-in-class thermal performance
• 1200 V optimized SMD package with creepage and clearance distances, > 6.1 mm on PCB
• Sense pin for optimized switching performance

Benefits

• Efficiency improvement
• Enabling higher frequency
• Increased power density
• Cooling effort reduction
• Reduction of system complexity and cost
• SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink

Potential Applications

• Drives
• Infrastructure - Charger
• Energy generation – Solar string inverter and solar optimizer
• Industrial power supplies – Industrial UPS