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FDD8880|ONSEMI|limage
FDD8880|ONSEMI|simage
MOSFETs

FDD8880

Trans MOSFET N-CH 30V 13A 3-Pin(2+Tab) DPAK T/R

onsemi
Fiches techniques 

Spécifications techniques du produit
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Process Technology
    0.35um to 2um
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    13
  • Maximum Drain-Source Resistance (mOhm)
    9@10V
  • Typical Gate Charge @ Vgs (nC)
    23@10V
  • Typical Gate Charge @ 10V (nC)
    23
  • Typical Input Capacitance @ Vds (pF)
    1260@15V
  • Maximum Power Dissipation (mW)
    55000
  • Typical Fall Time (ns)
    32
  • Typical Rise Time (ns)
    91
  • Typical Turn-Off Delay Time (ns)
    38
  • Typical Turn-On Delay Time (ns)
    8
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.29
  • Package Width
    6.1
  • Package Length
    6.54
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation et ressources

Fiches techniques
Ressources de conception