Arrow Electronic Components Online
BSC190N15NS3G|INFINEON|simage
BSC190N15NS3G|INFINEON|limage
MOSFET

BSC190N15NS3 G

Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP T/R

Infineon Technologies AG
Fiches techniques 

Spécifications techniques du produit
  • 유럽 연합 RoHS 명령어
    Compliant with Exemption
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Unconfirmed
  • 미국 세관 상품 코드
    8541.29.00.55
  • SVHC
    Yes
  • SVHC 기준 초과
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    150
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    50
  • Maximum Drain-Source Resistance (mOhm)
    19@10V
  • Typical Gate Charge @ Vgs (nC)
    23@10V
  • Typical Gate Charge @ 10V (nC)
    23
  • Typical Input Capacitance @ Vds (pF)
    1820@75V
  • Maximum Power Dissipation (mW)
    125000
  • Typical Fall Time (ns)
    6
  • Typical Rise Time (ns)
    53
  • Typical Turn-Off Delay Time (ns)
    25
  • Typical Turn-On Delay Time (ns)
    15
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1
  • Package Width
    5.9
  • Package Length
    5.15
  • PCB changed
    8
  • Standard Package Name
    SON
  • Supplier Package
    TDSON EP
  • Pin Count
    8
  • Lead Shape
    No Lead
Quantité de commande

Documentation et ressources

Fiches techniques
Ressources de conception