IGBT Chip

APT45GR65B2DU30

Trans IGBT Chip N-CH 650V 118A 543W 3-Pin(3+Tab) T-MAX Tube

Microchip Technology

Spécifications techniques du produit

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• Automotive

  No

• PPAP

  No

• Technology

  NPT

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±30

• Maximum Collector-Emitter Voltage (V)

  650

• Maximum Continuous DC Collector Current (A)

  118

• Maximum Gate Emitter Leakage Current (uA)

  0.25

• Maximum Power Dissipation (mW)

  543

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  21.46(Max)

• Package Width

  5.31(Max)

• Package Length

  16.26(Max)

• PCB changed

  3

• Tab

  Tab

• Supplier Package

  T-MAX

• Pin Count

  3