Spécifications techniques du produit
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
600
Maximum Gate-Source Voltage (V)
±30
Maximum Continuous Drain Current (A)
36
Maximum Drain-Source Resistance (mOhm)
190@10V
Typical Gate Charge @ Vgs (nC)
165@10V
Typical Gate Charge @ 10V (nC)
165
Typical Input Capacitance @ Vds (pF)
6640@25V
Maximum Power Dissipation (mW)
624000
Typical Fall Time (ns)
34
Typical Rise Time (ns)
43
Typical Turn-Off Delay Time (ns)
115
Typical Turn-On Delay Time (ns)
37
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tube
Mounting
Surface Mount
Package Height
5.08(Max)
Package Width
13.99(Max)
Package Length
16.05(Max)
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
D3PAK
Pin Count
3
Lead Shape
Gull-wing