CCB021M12FM3 | Wolfspeed WolfPACK SiC Power Module
1200V silicon carbide six-pack power module delivering maximum power density
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Overview
Wolfspeed’s WolfPACK family of power modules enables greater flexibility and scalability for designers by housing several Silicon Carbide MOSFETs inside a container with press-fit, solder-less pins to interface with an external PCB.
The modules feature application-specific pinouts optimized based on the internal arrangement of the MOSFETs, such as half-bridge, full-bridge, six-pack, and buck/boost layouts. High power density in a small baseplate-less footprint, coupled with SiC technology, enables compact layout, faster, cleaner switching, and affords designers as much as a 25% reduction in size. All configurations are available with the option of pre-applied thermal interface material.
Silicon Carbide Power Module Benefits
- • Maximum power density
- • Ease of layout and assembly
- • System scalability and reliability
- • Simpler cooling systems and smaller systems
Silicon Carbide Power Module Features
- • Leading silicon carbide MOSFET technology in an industry standard form factor
- • Highest current rated topologies commercially available
- • Built in NTC
- • Press fit connections
Wolfspeed WolfPACK Product Portfolio
| R(ON) at 25℃ | Product SKU | Configuration | Package | Blocking Voltage |
| 11mΩ | CAB011M12FM3 | Half-Bridge | FM3 | 1200V |
| 16mΩ | CAB016M12FM3 | Half-Bridge | FM3 | 1200V |
| 21mΩ | CCB021M12FM3 | 6-pack | FM3 | 1200V |
| 32mΩ | CCB032M12FM3 | 6-pack | FM3 | 1200V |
| 21mΩ | CBB021M12FM3 | Full Bridge | FM3 | 1200V |
| 32mΩ | CBB032M12FM3 | Full Bridge | FM3 | 1200V |
| 6mΩ | CAB006M12GM3 | Half-Bridge | GM3 | 1200V |
| 6mΩ | CAB006A12GM3 | Half-Bridge | GM3 | 1200V |
| 8mΩ | CAB008M12GM3 | Half-Bridge | GM3 | 1200V |
| 8mΩ | CAB008A12GM3 | Half-Bridge | GM3 | 1200V |
| 16mΩ | CCB016M12GM3 | Half-Bridge | GM3 | 1200V |
| 11mΩ | XCAB011A12GM3 | Half-Bridge | GM3 | 1200V |
Silicon Carbide Power Module Applications
WolfPACK modules enable multiple configurations across power levels for electric vehicle fast charging, industrial power, uninterruptible power supply, induction heating and welding, industrial motor drive, power supply, solar and renewable energy, residential and commercial energy storage systems, string inverters, and grid infrastructure applications.
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Especificaciones técnicas del producto
RoHS EU
Compliant with Exemption
ECCN (USA)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
Automotive
No
PPAP
No
Kategorie
Power MOSFET
Material
SiC
Konfiguration
Hex
Kanalmodus
Enhancement
Kanalart
N
Anzahl von Elementen pro Chip
6
Max. Drain-Source-Spannung (V)
1200
Max. Gate-Source-Spannung (V)
23
Max. Gate-Schwellwertspannung (V)
3.9
Max. Dauer-Drain-Strom (A)
30
Max. Gate-Source-Leckstrom (nA)
250
Max. Drain-Abschaltstrom (IDSS) (uA)
100
Max. Drain-Source-Widerstand (mOhm)
28.9@15V
Typische Gate-Ladung bei Vgs (nC)
162@15V
Typische Eingangskapazität bei Vds (pF)
4900@800V
Max. Leistungsaufnahme (mW)
121000(Typ)
Mindestbetriebstemperatur (°C)
-40
Max. Betriebstemperatur (°C)
125
Temperaturbereich Lieferant
Industrial
Verpackung
Box
Befestigung
Screw
Verpackungshöhe
12
Verpackungsbreite
33.8
Verpackungslänge
62.8
Leiterplatte geändert
23
Stiftanzahl
23
Family/Series
CCB021M12FM3
ROHS Version
2011/65/EU, 2015/863
Quantity Packaging
1

