| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±12 | |
| 3.4 | |
| 60@4.5V | |
| 2.8@4.5V | |
| 2.8 | |
| 277@10V | |
| 1400 | |
| 5.1 | |
| 4.2 | |
| 9.9 | |
| 2.65 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.02(Max) mm |
| Package Width | 1.4(Max) mm |
| Package Length | 3.04(Max) mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
This ZXMN2F34FHTA power MOSFET from Diodes Zetex can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 950 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with tmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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