Microchip TechnologyVN0106N3-GMOSFETs
Trans MOSFET N-CH Si 60V 0.35A 3-Pin TO-92 Bag
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.4 | |
| 0.35 | |
| 100 | |
| 1 | |
| 3000@10V | |
| 55@25V | |
| 20 | |
| 1000 | |
| 5 | |
| 5 | |
| 6 | |
| 3 | |
| -55 | |
| 150 | |
| Bag | |
| 2500@10V|3000@5V | |
| Mounting | Through Hole |
| Package Height | 5.33(Max) |
| Package Width | 4.19(Max) |
| Package Length | 5.21(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-92 |
| 3 |
If you need to either amplify or switch between signals in your design, then Microchip Technology's VN0106N3-G power MOSFET is for you. Its maximum power dissipation is 1000 mW. This device is made with dmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Dispositivos médicos alimentados por IA
Libro blanco Arrow: consejos e información sobre IA para el diseño de soluciones de diagnóstico y terapia rápidas y seguras.