| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | EA |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 100 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Continuous Drain Current (A) | 92 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 10 |
| Maximum Drain-Source Resistance (mOhm) | 4.5@10V |
| Typical Gate Charge @ Vgs (nC) | 58@10V |
| Typical Gate Charge @ 10V (nC) | 58 |
| Typical Input Capacitance @ Vds (pF) | 4000@50V |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 9.6 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Surface Mount |
| Package Height | 0.73 |
| Package Width | 5 |
| Package Length | 5 |
| PCB changed | 8 |
| Supplier Package | DSOP EP Advance |
| Pin Count | 8 |
