ToshibaTK6A60W,S4VX(MMOSFETs
Trans MOSFET N-CH Si 600V 6.2A 3-Pin(3+Tab) TO-220SIS Magazine
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 3.7 | |
| 6.2 | |
| 1000 | |
| 10 | |
| 750@10V | |
| 12@10V | |
| 12 | |
| 390@300V | |
| 30000 | |
| 7 | |
| 18 | |
| -55 | |
| 150 | |
| Magazine | |
| Mounting | Through Hole |
| Package Height | 15 |
| Package Width | 4.5 |
| Package Length | 10 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220SIS |
| 3 |
Create an effective common drain amplifier using this TK6A60W,S4VX(M power MOSFET from Toshiba. Its maximum power dissipation is 30000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes dtmosiv technology.
| EDA / CAD Models |
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