| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 3 | |
| -55 to 175 | |
| 37.1 | |
| 100 | |
| 1 | |
| 43@10V | |
| 54@4.5V|106@10V | |
| 106 | |
| 26 | |
| 14 | |
| 150 | |
| 4600@50V | |
| 175@50V | |
| 1 | |
| 230 | |
| 8300 | |
| 100 | |
| 20|160 | |
| 100|110 | |
| 15|42 | |
| -55 | |
| 175 | |
| 36@10V|40@4.5V | |
| 8.3 | |
| 40 | |
| 0.8 | |
| 3 | |
| 60 | |
| 1.2 | |
| 20 | |
| 9.2 | |
| Mounting | Surface Mount |
| Package Height | 2.29 |
| Package Width | 6.1 |
| Package Length | 6.54 |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Amplify electronic signals and switch between them with the help of Vishay's SUD50P10-43L-E3 power MOSFET. Its maximum power dissipation is 8300 mW. This MOSFET transistor has a minimum operating temperature of -50 °C and a maximum of 175 °C. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Dispositivos médicos alimentados por IA
Libro blanco Arrow: consejos e información sobre IA para el diseño de soluciones de diagnóstico y terapia rápidas y seguras.